JPH0510830B2 - - Google Patents
Info
- Publication number
- JPH0510830B2 JPH0510830B2 JP58206334A JP20633483A JPH0510830B2 JP H0510830 B2 JPH0510830 B2 JP H0510830B2 JP 58206334 A JP58206334 A JP 58206334A JP 20633483 A JP20633483 A JP 20633483A JP H0510830 B2 JPH0510830 B2 JP H0510830B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- etching
- diaphragm
- pressure sensor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58206334A JPS6097676A (ja) | 1983-11-01 | 1983-11-01 | 半導体圧力センサ及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58206334A JPS6097676A (ja) | 1983-11-01 | 1983-11-01 | 半導体圧力センサ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6097676A JPS6097676A (ja) | 1985-05-31 |
JPH0510830B2 true JPH0510830B2 (en]) | 1993-02-10 |
Family
ID=16521576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58206334A Granted JPS6097676A (ja) | 1983-11-01 | 1983-11-01 | 半導体圧力センサ及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6097676A (en]) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5181417A (en) * | 1989-07-10 | 1993-01-26 | Nippon Soken, Inc. | Pressure detecting device |
US5107309A (en) * | 1989-12-18 | 1992-04-21 | Honeywell Inc. | Double diffused leadout for a semiconductor device |
US5382823A (en) * | 1990-11-27 | 1995-01-17 | Terumo Kabushiki Kaisha | Semiconductor device and method for production thereof |
JPH06317475A (ja) * | 1991-07-19 | 1994-11-15 | Terumo Corp | 赤外線センサおよびその製造方法 |
JPH06160174A (ja) * | 1991-09-27 | 1994-06-07 | Terumo Corp | 赤外線センサ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2527124A1 (fr) * | 1982-05-18 | 1983-11-25 | Gerber Scient Products Inc | Porte-piece a depression |
JPS59169184A (ja) * | 1983-03-16 | 1984-09-25 | Nec Corp | 圧力センサの製造方法 |
JPS59172778A (ja) * | 1983-03-22 | 1984-09-29 | Nec Corp | 圧力センサの製造方法 |
-
1983
- 1983-11-01 JP JP58206334A patent/JPS6097676A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6097676A (ja) | 1985-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR840002283B1 (ko) | 실리콘 압력 변환기 | |
US4791465A (en) | Field effect transistor type semiconductor sensor and method of manufacturing the same | |
US4553436A (en) | Silicon accelerometer | |
US4961833A (en) | Field-effect transistor-type semiconductor sensor | |
US5693577A (en) | Method of making a silicon based biomedical sensor | |
US3994009A (en) | Stress sensor diaphragms over recessed substrates | |
JPH0567073B2 (en]) | ||
JPS59136977A (ja) | 圧力感知半導体装置とその製造法 | |
WO2000034754A1 (en) | Semiconductor pressure sensor and its manufacturing method | |
US3820401A (en) | Piezoresistive bridge transducer | |
US3798754A (en) | Semiconductor strain gage and method of fabricating same | |
US3848329A (en) | Method for producing a semiconductor strain sensitive element of an electromechanical semiconductor transducer | |
JPH0510830B2 (en]) | ||
EP0149330A1 (en) | ISFET Sensor and method of manufacture | |
JPS6142968A (ja) | 圧力−電気変換装置およびその製造方法 | |
JPS6097677A (ja) | 半導体圧力センサ | |
JPS6080281A (ja) | 半導体圧力センサ及びその製造方法 | |
JP2876617B2 (ja) | 半導体圧力センサ及びその製造方法 | |
JPS5913377A (ja) | 半導体圧力変換素子の受圧ダイヤフラム形成方法 | |
JPS62266876A (ja) | 半導体圧力センサ | |
JPH03208375A (ja) | 半導体圧力センサ | |
JP2905902B2 (ja) | 半導体圧力計およびその製造方法 | |
JPS62266875A (ja) | 半導体圧力センサ | |
JPH06244438A (ja) | シリコン半導体圧力計の製造方法 | |
JPS58100472A (ja) | 温度センサおよびその製造方法 |